Silicon carbide is pretty SiC

@toomanymarys7355

Жыл бұрын

Oh dear.

@WetDoggo

11 ай бұрын

Ha haa 👌

@vinniepeterss

2 ай бұрын

nice one😂

Impressively well researched video for a non electronics specialist. You’ve done a far better job than other commentators on the topics. Love your videos.

@JameBlack

Жыл бұрын

He is a genius engineer in disguise!

@compton2966

Жыл бұрын

I’ve always wanted to understand things on the levels he explains it.. and he has truly been someone I watch all the videos he produces

@philippepanayotov9632

Жыл бұрын

Yes, truly impressive KZread channel.

@paulmichaelfreedman8334

Жыл бұрын

Information scavenging and reliability checking is a skill in itself.

Wonderful! Can you also explain the Galium Nitride (GAN) transistors and how they compare to Silicon Carbide and other power switching devices. GANs are apparently also finding their way into power electronics lately.

@Palmit_

Жыл бұрын

GN Limited to diodes. the galium in the name idicates why. very ,very ,very limited and precise operating range. requiring a whole lot more cooling/Temp tech in same surface area. too expensive at this time to research and implement commercially. Universities are working on it though.

@kenoliver8913

Жыл бұрын

GaN is best for low voltage high current applications (eg chargers). That's because gallium nitride transistors are extremely efficient (so yuo can make them smaller and cheaper for a given power) but they have even lower "breakthrough" voltage than silicon, and far lower than SiC.

@luke144

Жыл бұрын

Gallium arsenide is showing up again as well.

@davidgunther8428

Жыл бұрын

GaN devices are extremely common in LEDs and are the basis of white LED lights, where they get hot, easily 150C. They have uses in power devices too, but like other III-V semiconductors don't have a good native passivation layer, ie MOSFET- like devices aren't easy to make with them. GaN and SiC are somewhat similar in electrical characteristics, but which becomes more widely used will be whichever one industry gets the most experience working with first. Silicon carbide outperforming silicon devices is REALLY significant because there are decades more experience with silicon, and getting silicon carbide devices to preform up to its theoretical potential is quite difficult.

@RNA0ROGER

Жыл бұрын

@@Palmit_ GaN fets are already on the market

John Atanasoff, inventor of the Atanasoff-Berry computer, one of the very early stored program digital electronic computers, talked in a speech at the Computer History Museum about theorizing about building transistors out of silicon carbide as far back as the 1930s. He knew that both galena (lead sulfide) and silicon carbide could serve as a cat's whisker crystal detector in a radio set. When they were improperly adjusted, they would oscillate, and oscillation means gain/amplification. Interesting that silicon carbide semiconductors are now a commercial product. Atanasoff envisioned making them out of what we would call nanowires.

@Bialy_1

Жыл бұрын

Its kinda amazing that someone made a "Computer History Museum" so many years before the first computer was actualy made... "and oscillation means gain/amplification." ekhm?! What? An amplifier is a circuit which amplifies the weak signal and raises the amplitude of the signal. An oscillator is a circuit which generates the AC waveforms of particular frequency for providing source to an electronic circuit.

@Bialy_1

Жыл бұрын

Also i gonna quote you Stanisław Lem: "No predictions came true. It turned out that only Antoni Gołubiew was right, who liked to repeat that the future lies in the fact that “everything is different” - differently than we imagine. And it really is. Except otherwise - it does not mean either greater or more terrible. Just different." And Stanisław Lem is a Polish Sci-Fi writer that in his books predicted: Internet, Google, e-books, audiobooks, tablets, smartphones, 3D printing, Virtual Reality...

About carbide hardness: tungsten carbide is used in good ballpoint and gel roller pens as the ball. It sees a lot of wear and needs to remain smooth and spherical to apply ink evenly

@stephenkikzass

Жыл бұрын

@@Ufbwgeufjdo I recall seeing a video on youtube about how far a pen an write before running out of ink. Divide that distance by the circumference of the ballpoint and you have your answer haha

@kayakMike1000

3 ай бұрын

Wouldn't steel be iron carbide?

Another great video. Being an engineer this was very easy to understand, but I think your explanation still bought a lot of easy to understand points to the Lay person. Your walk through the history of the materials and technology is also most important for the younger viewer (I do hope you have many young viewers). Thanks.

@kamolhengkiatisak1527

Жыл бұрын

A lay person of 70 years old like me who was educated during mainframe computer age using punch cards could understand such topic as well.

@KarelSeeuwen

Жыл бұрын

@@kuckoo9036 Things like SiC can form in many different crystalline structures, but only 1 ~ 2 can be used for electronics. The explanation of the Bandgap couldn't have been much simpler. The connection between the heat conductivity of the switching devices using SiC and the compactness / simplification of the design of the electronics and power control system was very well presented. Revisiting the material itself and walking through the process of making electronics grade SiC was very clear, and showing how the price has slowly decreased over a number of years gives anyone confidence that it is not magic, just a relatively new technology with a few teething problems. Got to go. Dinner time.

@MarkWTK

Жыл бұрын

I'm 25, is it young? it's not related to my field at all as I'm working in finance, but learning how the world works fascinates me 😀

@DemPilafian

Жыл бұрын

@@kuckoo9036 I'm a software developer, and I loved hearing about the manufacturing challenges of building large silicon carbide crystals. While I didn't understand 100% percent of it, I easily took in enough information that I can now explain the basics to fellow EV nerds. Awesome video!

@shrithanosmaharaj8679

Жыл бұрын

@@kamolhengkiatisak1527 i am 22, working in SiC fabrication R&D lab

Until a few months ago, I was a research fellow working on silicon carbide devices. Please allow me to leave some commentary: 1:40 - 4H and 6H are the only polytypes that can be grown as commercially-relevant bulk wafers, but 3C can be grown on silicon! 3C-on-Si is... well, it's not great. In layman's terms, the atomic spacing of 3C-SiC is different to that of Si, meaning 3C-on-Si is *full* of crystal defects. Just to pile it on, SiC fabrication processes can get up to 1600°C, but Si melts at those temperatures, meaning there's key steps you can't do properly to 3C. I am very interested to see if the 3C wafers devised by Francesco La Via and his team - where they start a 3C layer, melt off the Si and grow a new 3C wafer from the starting layer - can reach the crystal quality and practicality required for real devices. 3C has a bandgap that's not as wide as 4H or 6H, but its electron mobility is higher and it might compete with GaN in lower voltage applications. If La Via and his guys can improve their process! 2:00 - 4H has a wider bandgap than 6H and isn't much harder to grow, that's basically why we're using it. 2:08 - Tangent: the same strong atomic bonding that makes SiC hard also makes it a pain in the butt to chemically etch. Acids don't do anything to it and basically the only way to etch it is high-power plasma etching (plasma etching is common, but SiC needs a serious bombardment before any of it goes away) 2:26 - This explanation is generally pretty good. The wide bandgap of SiC means better temperature tolerance (lower intrinsic carrier concentration) and better voltage blocking, but you glossed over the higher frequency thing (and, TBH, I don't blame you). SiC has a higher electron saturation velocity than Si. Effectively, the electron speed limit is higher. *BUT* while the electron saturation velocity is higher than Si, the electron mobility is *much* lower (and don't even get me started on the hole mobility). The speed limit might be higher, but you've replaced your roads with grass fields. While SiC can *match* Si up to ~10MHz, it's beaten tidily by GaN at radio frequencies. 4:10 - While SiC as a semiconductor tolerates heat much better than Si, there's a reason why SiC transistors aren't rated to higher temperatures and it's *super important*: the oxide of the metal-oxide-semiconductor field effect transistor. I'll cover it in detail below... 6:57 - Partially true. Above 6.5kV, we go into the world of thyristors. Which I don't know that much about, other than 'big, scary whole-wafer devices', so I'll stop. 7:32 - This stuff about heat is a bit misleading. Power semiconductor devices *always* need heat management, but once you've put them in a proper box, the environment is usually less important than what thermal management you put in. 8:09 - You kinda turned over two pages at once here, mate. Batteries do not store as much energy as a tank of fuel and getting a battery electric vehicle to travel as far as an internal combustion engine (ICE) one is very difficult. Also, paradoxically, the high efficiency of electric motors means that small inefficiencies in the car's design turn into bigger losses of range. Those pop-out door handles that sit flush to the car while driving don't really make any difference to an ICE car - which is already pissing away ~80% of its energy - but they do genuinely help with an EV. Thus, adding or saving weight translates more directly into range, which is something EV buyers prize highly while they make the adjustment to EVs and their shorter range. 8:18 - Sorry, this is a pretty big error. Also kinda complicated to unpack, but I'll give it a go. Beyond the transistor itself, building a power converter requires passive components. Capacitors and inductors. Transistors switch almost a million times per second and passive components act as energy reservoirs to smooth out voltage and/or current. The faster the switching speed, the less time the passives need to plug the gap for, and the smaller they can be. When it comes to capacitors and, particularly, inductors, a larger capacitance/inductance value means a physically larger and heavier component. Fast-switching SiC MOSFETs (they switch much faster than a Si IGBT of the same voltage/current rating) mean smaller, lighter, cheaper passive components, and this is where the bulk of the efficiency saving comes from (although faster switching normally also means lower losses in the conversion itself, so higher efficiency and less heat generated). 9:27 - Material growth *is* a major limitation of SiC. It's not the only one, and I need to do a full-length diatribe about oxides below... 10:37 - This breakdown of PVT growth is *excellent*, and I just learned a thing or two about it. This explanation makes the process sound a lot cleaner and less messy than it really is: controlling the temperature gradient around the reactor well enough to create a decent SiC ingot with no polytype inclusions is extremely difficult, and I'm not entirely convinced that another ingot growth method isn't going to replace PVT (/hottake). 11:58 - SiC wafers can be laser cut. I don't know about wafering from an ingot, but it's also possible (if a little risky) to cleave the wafer to dice it, like cutting glass. But just laser cut it. OK, I need to talk about oxides, not just because they were the topic of my PhD but also because they're the weakest part of a SiC MOSFET. When making a metal-oxide-semiconductor stack for a silicon transistor, you use the silicon as a ingredient for the oxide. Stick a clean wafer in a hot furnace with oxygen flow and it will slowly oxidise to a very clean, orderly silicon dioxide. When you try to do this with SiC, for a few nanometres you get Si oxidising to SiO2 and C burning off as CO2, but the carbon quickly ends up trapped in the oxide and at the oxide-semiconductor interface. This tanks the performance of the oxide. There are moderately-effective ways of un-tanking the performance - using NO or N2O as the oxidising gas, instead of oxygen - but they're still much worse than for Si devices. The on-state resistance of SiC MOSFETs is limited by the quality of the gate oxide and the MOSFET channel it produces. The maximum temperature is limited by the reliability of the oxide: up to 175°C, the oxide is OK, but above that its lifetime shortens drastically. My pet project during my postdoc (which I've still got a successor working on, which I am super-grateful for) was depositing SiO2 rather than oxidising the Si. You can't trap any carbon if you leave it all in the semiconductor. Instead, you have different problems, like oxygen vacancies in the oxide. I should stop. Thanks for sharing. This video is a good introduction and overview of device technologies that you don't see in popular engineering. Good stuff!

@gigabyte2248

Жыл бұрын

Bonus comment: SiC MOSFETs are replacing Si IGBTs. MOSFETS generally operate at lower voltage/current and higher frequency than IGBTs, but SiC beats that tradeoff and allows SiC MOSFETs to match the voltage/current ratings of IGBTs, but with lower switching losses and higher switching frequencies. Similarly, the SiC Schottky diodes that replace Si PiN diodes beat the beefiness vs. speed tradeoff to switch big current/voltages faster than Si PiN diodes. But... why not SiC PiN diodes and IGBTs? MOSFETs and Schottky diodes are unipolar devices. They rely solely on electrons (or solely holes but eww, no) for conduction, which means they can pull in and push out electrons quickly to turn on and off. IGBTs and PiN diodes are bipolar devices. They rely on flooding the device with *both* electrons and holes when it's turned on, dropping the resistance but slowing things down, as you have to inject those carriers during turn-on, then extract them all out during turn-off. Critically important for bipolar devices is the lifetime of injected carriers ('minority carriers', i.e. holes in the n-doped side and electrons in the p-doped side), as the time it takes for the electrons to drop down into the valance band and fill the holes determines how far they'll travel through the device in the on-state and how long it will take to clean them all up when you try to turn off. The minority carrier lifetime in as-grown SiC is lousy. There's about 1 part-per-billion of carbon vacancies in the material, but these are states in the middle of the bandgap, making a perfect stopover point for electrons trying to recombine, so they have a disproportionate effect on minority carrier recombination. There are ways to re-process the SiC to improve the lifetime (basically by driving in extra carbon to fill the vacancies), but extra steps cost money and they've not been fully proven yet. Without lifetime enhancement, a SiC PiN diode looks like a Schottky diode, with none of the minority carrier action normally used to reduce the resistance. There's an extra complication with the IGBT. MOSFETs start with an n-doped base and stack up from there (n-type voltage blocking region, then implanted p-well and n-type & p-type contacts), whereas IGBTs start with a p-doped base. The only good SiC wafers are n-type. You have to grow your active layers, then *remove* *the* *entire* *substrate* somehow. We did this with a dry etcher, which etched a whopping 300 microns of SiC and jsut so happened to conk out a few weeks later, but you'd probably do this with chemical-mechanical polishing in the real world - a process which is becoming more popular to remove the resistance of the starting n-doped wafer. Researchers have made SiC IGBTs, though, and 10kV is just the starting point for them. There would need to be some serious work before large-area devices with high current ratings were ready for commercial use (particularly with the minority carrier lifetime enhancement stage), but 20kV *single* *devices* should be very much possible. And that's before you get on to SiC thyristors - I started designing and building a high voltage breakdown testing rig before I left, and it will go all the way up to 60kV. My old uni won't make any devices that highly-rated this year, or next year, but I wouldn't be surprised if they reach the point where they hit 60kV without the device breaking down. *This* is where I get excited about potential future applications. A 30kV IGBT is a real game-changer, and opens the door to wild new possibilities in power conversion. These are exciting times to be a power enthusiast.

@dadude2672

Жыл бұрын

@@gigabyte2248 Very well explained but i guess the explanations above would have doubled Video length without adding more information for the average audience. Only point i think this Video could need some adjustment is your comment about the passive components as SIC helps downsizing the whole applications as you described very well above and passives add a big portion to the overall cost on HV applications.

@theMuritz

Жыл бұрын

As a layman (mechanical engineer) I am grateful for this channel and commenters like you two here, who know what they’re talking about. Material science is a fascinating field

@cdl0

Жыл бұрын

Brilliant. Huge thanks for dealing with this; somebody had to do it, and I'm glad it is not me. Anyway here are two more things: stacking faults and threading dislocations. These are intrinsic to the material (i.e. not due to impurities). The stacking faults are a consequence of their low energy of formation, and act as quantum wells in the material, because they are in effect an atomically thin layer of a different polytype, with a different bandgap. Normally, these would occur randomly, which has undesirable consequences for electronic characteristics; however, they have the potential to be exploited in creating devices with special characteristic if they could be fabricated intentionally in a controlled manner. On threading dislocations, these are also an unavoidable problem for any hexagonal crystal system. In SiC, they can create microscopic pipes that penetrate a device from one face to the other. Metals from electrical ohmic contacts then migrate through the pipes and short out the device, resulting in failure. Methods have been devised to ameliorate these problems, otherwise commercial products would not exist; however, it is not easy. GaN sufferes similar problems, except the threading dislocations are much smaller, and in this case spoil the optical properties, as well as causing electronic failures. Of course, we can all dream of using diamond for electronics, which would be even better. . . . However, this is yet another huge topic. ;-)

@gigabyte2248

Жыл бұрын

@@cdl0 Threading edge dislocations (TEDs) and threading screw dislocations (TSDs) are minor defects, mainly just causing lower breakdown voltage. Basal plane dislocations (BPDs) are worse and expand into single stacking faults (SSF) that add a lot of resistance to the device. I think these are the only relevant 'stacking faults'. Micropipes are absolute killers, like you said, and have mostly been eliminated from modern SiC wafers. BPDs and their expansion into SSF are nuts. If there's enough energy available (from electron-hole pairs recombining), the BPD expands into a SSF from its root at the interface between the original wafer and epilayer. This can happen at room temperature. Yes, SiC can change its crystal structure at room temperature. This usually happens in bipolar devices (PiN diodes and IGBTs) and is one of two main reasons why these devices aren't out there yet (the other is short minority carrier lifetime: injected electrons & holes recombine so fast that the device is practically unipolar). There are three ways to attack this problem. 1. Grow a wafer with fewer BPDs. Easier said than done. 2. Get the epilayer growth conditions right to convert BPDs at the surface of the wafer into TEDs (or is it TSDs?) in the epilayer. TEDs(/TSDs) aren't great, but they're better than BPDs! 3. Stop the electron-hole pairs from reaching the interface. Commercial epilayers have a highly doped layer at the bottom, with the dopants causing the recombination to happen super-quickly. This prevents holes from the top of the device reaching the root of the BPDs and causing them to expand. At least in theory. I wanted to study bipolar devices and bipolar degradation suppression a bit more, but the funding wasn't there and it was time to move on. More progress is bound to be made, if for no other reason than SiC PiN diodes (and IGBTs) would be awesome.

Consistently impressed with how you distill technical topics into their essence, explaining enough detail that a scientist can understand while a layperson can follow along. Another disruptive application of SiC is in electric kilns, nichrome wire barely gets to 1200C, SiC filaments can get up to 1600C. Would be critical for decarbonizing heavy industry like cement and aluminum. One of the issues in this field is also with scale of heater elements.

I took one condensed matter/solid state physics course in college and this video was very digestible, I would say even for people without the physics background.

I don’t find many videos out there that dive into details of semiconductors like this. As chip designer I actually learned things from your video. Please, continue the great work you have been doing in this channel.

@7:41 I don't think many people in the world would recognize that! It's the underside of an older Proterra bus. Having worked on them in wintry cities, I can confirm that those are some harsh conditions indeed.

This is why I Love this channel, I always learn something new about industry with a little dash of humor on the side.

Another wonderful essay from Jon at Asianometry. I always feel so much wiser after seeing or hearing (sometimes I just listen) to his well choreographed presentations. This wisdom doesn't last long but it's nice while it does ☺. Maybe when I get my silicon-carbide brain implant that will change 🤪

Informative and of high quality as usual. Thanks for sharing!

well researched and surprisingly interesting as always

Another masterful episode....Stories such as these, and the one on MEMS bring to light the lesser-known, but equally vital components that are starting to underpin modern lives. Thank you for this episode!

You often mention "packaging" which means something different than what most people normally would understand it to be (cardboard boxes and styrofoam). Can you do a video on the meaning of "packaging" throughout the semiconductor industry?

@simonlinser8286

Жыл бұрын

i think most people who are into this subject even on a superficial level can figure out that the package means something different. if you've ever studied circuits or built them you know that ICs and transistors come in different packages sometimes with different pin outs even though they have the same chip inside of them.

@Hortifox_the_gardener

Жыл бұрын

It is a very interesting topic that recently evolved into so much more than "somewhat specialised copany glues chip onto circuit board in Malaysia" with 3D packaging, chip stacking and 3D via connections.

Thank you for all of your work, it's well explained and totally understandable.

You're a godsend Jon! You bring up everything I didn't know I wanted to know :D

Multiple people have mentioned doing a video on GaN, I'd love that too. Another worthwhile topic relates to that graph about growth in the power electronics device use - the insane backlog in getting devices. There a cracks in the supply / demand when it comes to processors and other devices, but the high backlogs on power electronics looks solid.

Great job covering this challenging subject.

Thank you again, I feel as if you have really expanded my knowledge base on this topic. I am very grateful.

Fantastic video good technical overview of the difficulty of manufacturing these components👍👍🏆

I have to say, I particularly enjoyed this episode, the mix of science, applied technology and economics was excellent and well delivered.

been away from electronics for awhile and i still understood most of this. great video!

Thank you for giving me an introduction in this technology as I work for Inverters in the automotive industry. This really was a useful introduction to something everybody speaks of, but nobody dares to really explain

Big fan of your videos, I have been following and keeping up closely. I work in the Industry for the major semiconductor tester manufacturer (starts with a T). Would feel honored if you made a video on the concept of semiconductor testing. All manufactured chips need to be tested before use, so its a big part of the industry.

Another amazing and informative video !!! Thanks Brother !!

Very nice summary, and a great starting-point for anyone starting to study SiC!

15:10 future applications might crop up ... in the future I felt that so hard because I've said stuff like that out loud so many times. Great video, just trigger my OCD with the last bit there :)

That was a very clear explanation -- great work!

Another very interesting video. Thank you for posting.

Following you already a long time and was wondering when you do the video about one of the most powerful changes in the industry for high power applications. I am working for an SiC Semiconductor manufacturer and i think you did a great job explaining the technology. Short correction traditional silicon mosfets work up to 100V max.

Your videos are very thorough and well made

A new step in semiconductor tech. Brilliant video, thank you.

Superb!! Thanks a lot 🙏🙏 curious about how much time you spent making it

Excellent video as always. Microsemi was acquired by Microchip Technology in 2018

Very nice video! I'd like to add that amorphous SiC also has great potential in developing photonic circuitry due to its high refractive index contrast with silicon dioxide, along with very tunable absorption characteristics. Interesting applications for the telecom industry, as well as some quantum internet and computing applications (due to adhering well to diamond which is popular for single photon emitters).

As a college undergrad in 1991 I worked in a university (University of Florida) research lab doing preparation and characterization of Silicon Carbide deposited layers onto various materials. Our method was chemical vapor deposition whereby a graphite holder inside of a quartz tube surround by outside copper coils with cooling water running through them would be subjected to an A/C current. As the magnetic fields changed polarity many times per second the graphite crystal layers would react to the changing magnetic fields and thereby induce heating through the friction associated with the graphite layers "rubbing" against each other. It was so long ago now I don't remember the exact temperature but I do remember the graphite would begin to glow after a short while. The substrate (Alumina if I recall) we planned to deposit the SiC on was placed on the graphite holder during assembly and consequently would also get heated to exceedingly high temps. Once the entire assembly was up to temp I would inject into the reactor a steady flow of Hydrogen (H2) gas bubbled through a silicon tetrachloride solution. The SiCl4 would diffuse into the hydrogen and be transported into the reaction chamber and them a constant stream of methane (CH4) gas was used as the source for carbon in the experiment. The high heat energies would rip apart the molecules and you would then have a gaseous phase of carbon, silicon, chlorine and other elements above the substrate. Some fraction of these materials would react to form Silicon-Carbide (SiC) that gets deposited onto the substrate. The whole purpose of the experiments were to characterize the regime under which you maximized SiC production and minimized other undesired reactions. For that we would have to take the samples to the materials science department on campus where we could use their SEM to check the deposited layers for purity. All of this work went on for years and formed the basis of a PhD thesis for a graduate student I was working with. It was also funded by DARPA principally as a means to identify coatings that could be used in tank engine components to protect them from wear and corrosion. Never did I imagine there would be a use for this material as a semiconductor. Although I have to say it makes sense because the professor who was the PI for all these research projects was a specialist in semiconductor materials.

You are a very knowledgeable guy, thanks for all the great videos

As friend of the channel Bane once said... Love it!!

I really love your videos. The content helped me understand SiC much better. Will it be possible to create video content on Sputtering target coating? IE Ta2O5 - high refractive index paired with low refractive index coating and its applications. Thanks!

Wonderful channel I'm new to it with my research of physics in plasma and hi voltage. Keep up the good work of furthering understand of that world in science Thank you very much

Excellent! I used to work for one of the big utility solar companies. Getting PV string sizes up to 3kV (from 1.5 today) dropped total system cost over 10%. One limiting factor was the silicon transistors in current inverters so this could address that.

Ended up here from researching my 1st guitar amp, at least I understand a few things a lil better, thanks dude.

I AM OUT OF CONTROL AND SILICON CARBIDE IS TO BLAME!!!

@williambrasky3891

Жыл бұрын

Got a gallon!

@Elcheecho

Жыл бұрын

Isn’t this the opposite of the point of the video?

@michael_r

Жыл бұрын

Maybe you need more cowbell.

@williambrasky3891

Жыл бұрын

@@Elcheecho Nope, just a bad batch of the ole 'bide. Shit's not only openly doped, the yields are crap. Where better to market such busted wares than the streets?

Love your videos about the modern electrical components! Funny memetics too 👌 Any intention to talk about Gallium-Nitride (GaN) rectifiers? They kinda took the charger market by storm in my opinion (not that I closely followed the space), and saw in your graph that their production cost matches Silicon based electronic components. Would love to hear your research about the topic! Scrolling through the comments I'm not the only one with this question. I didn't intend to join some kind of gang-up. x)

Awesome video as usual! 👍 Thank you so much.. Hope you can do a video about Aixtron, very interesting company in this space too!

I like how you had fun with this one.

Thank you Mr.Bane for ur wisdom

Finally SiC!!!! .. Im Ph.D student and I'm working with silicon carbide.. Finally a video about that!

Thank you for the video

Thanks. great vid.

Great work.

awesome presentation sir

Super interesting. Thank you.

Hey, what is the source for the charts near the end (e.g. Si vs SiC vs GaN inverter cost breakdown)? Thanks and great video!

Great vid on WBG semiconductors! Would you consider doing a video on GaN power devices (if you haven’t already)?

Great video! I want to see more SiC stories

Dude you make great content and arent super narcissistic or annoying. Props

Your subtle stab at internet commenters made me laugh 😂. And yet here I am commenting again! Great video! Just joined your newsletter too! Love all your hard work 🥰

Great video, could you do a video about GaN?

Interesting video as I started making use of the silicon carbide Schottky diodes for Meyer's technology as I learned how it worked and where Meyer went wrong and made many improvements to the technology using silicon carbide chips. I never knew the history behind the chips but just saw them on the market and was amazed at what they could do for this technology. Now the water for fuel technology basically lives again but I have to build it correctly first but I have posted the science behind this technology to put down years of fossil fuel industry propaganda about the technology. When you look around the world you will notice that everything is already powered by hydrogen as all life depends on hydrogen to survive. I went over photosynthesis very closely to see if they had missed anything and it turns out they did. You see they never asked, "How does a plant break the bonds of the water molecules?" Answering that question lead me to the true science behind the water for fuel technology. What I found in my research was Meyer's method basically mimicked the earth's Global Electric Circuit and I suspect that Dr. Dingle's did also. All of these men were brought up in a court of law controlled by the fossil fuel industries money and lost their court cases, wow! big surprise there, huh? Anyway I posted the science behind this technology at the OverUnity site under, "Stanley Meyer Explained." Note it is just the science as learning how to make it work correctly I did not teach, but I had to post it so that I could put down the propaganda surrounding this technology created by those that sell fossil fuels for a living. I'm not really a fan of EV's as I know there simply isn't enough materials to go around to be able to replace ICE cars it's a dead giveaway if you just pay attention to the name of the materials they use to make EV's as they use "Rare Earth Materials," meaning there simply isn't enough to go around as we are talking more that 1.3 billion cars needing to be replaced and that number doesn't include other vehicles such as ships, farm equipment, warehouse equipment, and all types of planes of which the current technology doesn't have the power density to power right now. Thus the true solution is to switch the source of the hydrogen we need away from fossil fuels to just using plain ordinary water.

Would love to see more silicon carbide electronics episodes.

Amazing! I was wondering as you talked if these Soviet inventions contributed to the (relative) success of the Venera probes. Nice that you mentioned later that they did indeed.

Always with something interesting... 🙏🙏🙏

Excellent ep as always! 5:09 SC and Slovakia LOL😂

Your voice is so soothing...☺️

5:45 What a beautiful sine wave :D

Looking forward to silicon carbide based mosfet use in other power technology in Battery BMS units and Solar Inverters.

3:32 ". . . become like internet commenters and cannot switch off, becoming useless." Brutal! I love it ROFL.

The meme jokes may be misaligned with your demographic. The 'water succeeds gasoline' joke is perfectly aligned with the same. Good video, had a couple chuckles watching it!

thats a really nice primer

“I love rocks”…subscribed!

What suprised me about this is that the video infered Silicon Carbide was resent. But Texas Instruments has been building commercial products out of it for over 10 years. They do make a lot of power electronics out of it but they also make Microcontrollers and CPUs and many other items.

this is one of the best channels on youtube, it's got memes, it's got technical information, it's got frequent uploads, its got good production

Perhaps gallium nitride (GaN) power electronics should be covered as well, because it is one of the main competitors to SiC

Very informative video.. A follow up with GaN power electronics? 🤔

Great video! Can you follow up with a greater discussion on the players within the SiC supply chain? Everything from furnace suppliers, through wafer makers, device manufacturers, and inverter suppliers. Furthermore, I know China is aggressively moving into SiC and GaN. I would love to hear your assessment of the key players there too.

I work in the semiconductor industry and we are currently experimenting with improved SiC chemical mechanical polishing methods :)

A video comparing SiC to GaN in power electronics applications would be cool

"I love rocks." Jesus Christ, they're MINERALS!

Gem of a channel.

I wish you could keep going too bro. do a longer video for those of us that listen religiously.

Defective (maybe, maybe not) boron carbide chest plates for furnace lines are on ebay. Carbide sandpaper for metal and flint or ruby for wood or you'll be sorry. Al ox is fine for rough work.

Thanks!

great Video. Please also make videos for GaN.

SiC = carborundum; grinding stones. First time I heard of SiC, outside of shop class, was when Cree started, and their first products where SiC, high temperature transistors. The original (dim) blue LEDs came out later. I bought a few in 1989. Next time I wanted to buy more, the distributor informed me, that they no longer stocked them. They had been replaced by these new LEDs, made of GaN. The LEDs we know now. Wolfspeed, formerly Cree. Good to know.

great vid

You forgot one big thing. Heat radiates with the 4th power, so a chip that can get twice as hot, can radiate 16× the power. 150V vs 900V is a 6× increase. Which means a 1300× fold increase in heat dissipation, but power rises with the square, for a net of H_dis = V²

In 6:08 you must indicate the sign for alternating current in the input. Not like here in the picture a plus and a minus.

3:30 major shade being thrown

Amazing!

I make the wafers in the lab at Wolfspeed. Very easy to understand and build.

Hey it’s my car! Another excellent video.

You like rocks and the Loki series? You are just full of hot takes! Very bold!

definitely something to think before you sleep about :)

Awesome! I wonder if this'll help lead to a doped graphene semiconductor?

one more great video.

You can do another video on Gallium Nitride and power electronics