Descriptions:
Plasma-Therm plasma enhanced chemical vapor deposition (PECVD) 790 system is used for depositing Si3N4 dielectric film.
It is typically used for chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings.
It is fully programmable with windows-based software, and use a 13.56 MHz RF source excitation to produce the plasma between two parallel aluminum plates.
The gas is injected over the sample through a showerhead, and the samples are placed on the system holder which is heated to 250°C.
Si3N4 is produced from SiH4/N2 2%/98%, NH3 and N2.
Features:
Gases used: NH3, 2%SiH4/N2, N2 and SF6
Full computer operation
Standard recipes for a variety of film thicknesses
EMO protection