This video explains, analyzes and shows the design process of a self-biased inverter-based amplifier in 45n CMOS. The design process demonstrates how we can get gain at low frequencies of about 30dB and unity gain bandwdith at tens of GHz. The low frequency gain is acquired via increasing the output resistance through increasing the lengths, L, of the mosfets, while the high-frequency gain is acquired via increasing the transconductance of the structure by increansing the widths, W, of the mosfets. Three types of simulations are shown - DC sweep, AC sweep and transient simulation. The video argues that the inverter-based amplifier is simple structure to design, which however can bring near-optimal performance for a given IC CMOS process.