No video

#3 Transconductance of MOSFET in strong inversion

This video describes transconductance or gm of MOSFET in strong inversion region. Video starts with simple definition followed by graphical definition followed by mathematical point of view. Then gm equations for the MOS transistor in strong inversion region is derived and explained with examples. Apparent contradiction in various strong inversion gm equations is explained.

Пікірлер: 16

  • @hemantshukla3098
    @hemantshukla30985 жыл бұрын

    Superb... so simply explained such an important concept.

  • @98505177229850590818
    @985051772298505908185 жыл бұрын

    really thoughtful explanation.. students need this since they dont learn how to use these equations in biasing of the circuit.. school/ colleges dont teach this , while they give more preference on teaching complex stuff and ignore basics.. thank you @Analog Snippets

  • @giuseppemacera5125
    @giuseppemacera51252 жыл бұрын

    Really good! Well and simply explained

  • @Ashusingh-ze5jp
    @Ashusingh-ze5jp Жыл бұрын

    Awesome thank you sir

  • @vikasjoshi2852
    @vikasjoshi28525 жыл бұрын

    Very nicely explained!!

  • @mariagromysch6274
    @mariagromysch62744 жыл бұрын

    Thank you, very clear video

  • @hemantshukla3098
    @hemantshukla30985 жыл бұрын

    Concept of independent and dependant variable explained amazingly through graphs

  • @analogsnippets

    @analogsnippets

    5 жыл бұрын

    Thanks Hemant👍

  • @pushpitadutta5070

    @pushpitadutta5070

    5 жыл бұрын

    Yes, I agree. It is such a common dilemma, and this video makes it very clear

  • @sudhanshusingh1234
    @sudhanshusingh12345 жыл бұрын

    Excellent explanation!

  • @analogsnippets

    @analogsnippets

    5 жыл бұрын

    Thanks Sudhanshu

  • @akshatsingh1435
    @akshatsingh14355 жыл бұрын

    Nice video

  • @RahulDewani
    @RahulDewani Жыл бұрын

    Thanks for all your efforts in sharing your design experience with meticulous documentation and intuitive explanations! I am enjoying the videos a lot! If possible please clarify further on one of the points shared in the video: - It is mentioned that Gm has a strong effect on: Gain, Bandwidth, settling time, matching and noise. Q. Gm effects Gain, BW, settling time and noise. Agreed! But I could not recall the effect of Gm on Matching of transistors. Did you mean the input referred offsets? From what I recall, the threshold voltage offset depends on the area of devices W * L, and I think one can visualise the input pair Vt offset as input referred offset directly, so that gm does not come into the picture at all. I think my thought process is not in the correct direction. Any inputs will be very helpful. Thanks for the help!

  • @analogsnippets

    @analogsnippets

    Жыл бұрын

    Hi Rahul, glad to hear that you are finding videos helpful. To your question: gm does appear in mismatch equations. It appears as gm/Id ratio. You may review video #8 where I discussed mismatch of current mirror. Similar derivation can be made for input diff pair. Please let me know if you have follow up question. Thanks.

  • @RahulDewani

    @RahulDewani

    Жыл бұрын

    Thanks a lot for pointing me in the right direction. I was focusing on the absolute offset alone, but I see your point now. The derivations for relative offsets are great. I do not recall seeing this level of detailing in most of the books I have referred. Thanks again for all the awesome videos! :)

  • @98505177229850590818
    @985051772298505908182 жыл бұрын

    If ID is constant and w by L is variable then Gm is proportional to sq root of w by L Gm is inversely proportional to vgs - vt this is second equation since id is constant So as per first equation vgs- vt is inversely proportional to square root w by l so that make sense Now according to first equation since Gm is square root proportional to w by l so